document number: 81146 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.0, 29-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high power infrared emitting diode, 850 nm, surface emitter technology vsmy7852x01 vishay semiconductors description vsmy7852x01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance little star package. a 20 mil chip provides outstanding low forward voltage and allows dc operation of the device up to 250 ma. ffeatures ? package type: surface mount ? package form: little star ? ? dimensions (l x w x h in mm): 6.0 x 7.0 x 1.5 ? peak wavelength: ? p = 850 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 60 ? low forward voltage ? designed for high drive currents: up to 250 ma dc and up to 1.5 a pulses ? low thermal resistance: r thjp = 15 k/w ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? lead (pb)-free reflow soldering ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec aapplications ? infrared illumination for cmos cameras (cctv) ? driver assistance systems ? machine vision ir data transmission note ? test conditions see table basic characteristics note ? moq: minimum order quantity 20783 2078 3 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) vsmy7852x01 42 60 850 15 ordering information ordering code packaging remarks package form VSMY7852X01-GS08 tape and reel moq: 2000 pcs, 2000 pcs/reel little star absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 250 ma peak forward current t p /t = 0.5, t p ? 100 s i fm 500 ma surge forward current t p = 100 s i fsm 1.5 a power dissi pation p v 500 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. figure 7, j-std-20 t sd 260 c thermal resistance junction/pin ac c. j-std-051, soldered on pcb r thjp 15 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81146 2 rev. 1.0, 29-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vsmy7852x01 vishay semiconductors high power infrared emitting diode, 850 nm, surface em itter technology fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature 21779 t amb - ambient temperature (c) p v - power dissipation (mw) 0 100 200 300 400 500 600 0 20 40 60 80 100 120 r thjp = 15 k/w 21780 t amb - ambient temperature (c) i f - forward current (ma) 0 50 100 150 200 250 300 0 20 40 60 80 100 120 r thjp = 15 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 250 ma, t p = 20 ms v f 1.8 2.0 v i f = 1.5 a, t p = 100 s v f 2.8 v temperature coefficient of v f i f = 1 ma tk vf - 1.5 mv/k reverse current v r = 5 v i r not designed for reverse operation a radiant intensity i f = 250 ma, t p = 20 ms i e 30 42 90 mw/sr i f = 1.5 a, t p = 100 s i e 220 mw/sr radiant power i f = 250 ma, t p = 20 ms ? e 130 mw temperature coefficient of ? e i f = 1 a tk ? e - 0.5 %/k angle of half intensity ? 60 deg peak wavelength i f = 250 ma ? p 850 nm spectral bandwidth i f = 250 ma ?? 30 nm temperature coefficient of ? p i f = 250 ma tk ? p 0.2 nm/k rise time i f = 250 ma t r 8ns fall time i f = 250 ma t f 10 ns
document number: 81146 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.0, 29-apr-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vsmy7852x01 high power infrared emitting diode, 850 nm, surface emitter technology vishay semiconductors basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - radiant intensity vs. forward current fig. 5 - relative radi ant power vs. wavelength fig. 6 - relative radiant in tensity vs. angular displacement 21781 i f - forward current (a) v f - forward voltage (v) 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 t p = 100 s 21782 i f - forward current (a) i e - radiant intensity (mw/sr) 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 t p = 100 s - wavelength (nm) 21776 e, rel - relative radiant power 0 0.25 0.5 0.75 1 650 750 850 950 0.4 0.2 0 i e, rel - relative radiant intensity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81146 4 rev. 1.0, 29-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vsmy7852x01 vishay semiconductors high power infrared emitting diode, 850 nm, surface em itter technology taping dimensions in millimeters 20846
document number: 81146 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.0, 29-apr-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vsmy7852x01 high power infrared emitting diode, 850 nm, surface emitter technology vishay semiconductors package dimenisons in millimeters 20848
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81146 6 rev. 1.0, 29-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vsmy7852x01 vishay semiconductors high power infrared emitting diode, 850 nm, surface em itter technology solder profile fig. 7 - lead (pb)-free reflow solder profile acc. j-std-020 for preconditioning acc. to jedec, level 2a drypack devices are packed in mois ture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 4 weeks conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 2a, acc. to j-std-020b drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
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